Abstract

Excitation power dependences of photoluminescence spectra and radiative lifetimes were examined in semiconductor (CdS_xSe_1−x) -doped glasses at liquid-nitrogen temperature. When we considered a three-level system, the nonlinear power dependences were explained well in terms of a change of carrier-recombination routes that was due to population saturation of a low-lying trapping state. Experiments with superposed, two mode-locked pulse trains consisting of strong and weak excitation pulses clearly confirmed the population dynamics of the trapping state. Seemingly contradictory experimental results reported thus far for the nonlinear-optical response are explained in light of our nonlinear photoluminescence experiments.

© 1989 Optical Society of America

Laser-induced irreversible change of the carrier-recombination process in CdSXSe_1–X-doped glasses

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