Abstract
We report on the modeling and experimental characterization of an InP-based photonic crystal wire cavity laser bonded to a silicon wafer. Simulations give an insight into the variation of the resonant mode frequency and the dependence of the Q-factor on the geometrical parameters of the laser cavity. Calculated and measured Q-factors are of the order of . A low threshold laser operation is demonstrated.
© 2010 Optical Society of America
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