Abstract
Simultaneous measurements of the photorefractive and the absorptive grating gain components in GaAs:EL2 are made and are shown to display qualitative behavior consistent with linearized solutions of a two-carrier rate equation model. These two components, together with the linear absorption coefficient, permit determination of four independent material parameters, e.g., the ionized and the nonionized EL2 densities, the hole photoionization cross section (σh), and the electro-optic coefficient (r41). Data obtained at optical wavelengths of 0.96 and 1.06 µm indicate that σh and r41 are larger than published values.
© 1996 Optical Society of America
Full Article | PDF ArticleMore Like This
K. Shcherbin, S. Odoulov, R. Litvinov, E. Shandarov, and S. Shandarov
J. Opt. Soc. Am. B 13(10) 2268-2277 (1996)
R. S. Cudney, R. M. Pierce, G. D. Bacher, and Jack Feinberg
J. Opt. Soc. Am. B 8(6) 1326-1332 (1991)
L. A. de Montmorillon, Ph. Delaye, G. Roosen, H. Bou Rjeily, F. Ramaz, B. Briat, J. G. Gies, J. P. Zielinger, M. Tapiero, H. J. von Bardeleben, T. Arnoux, and J. C. Launay
J. Opt. Soc. Am. B 13(10) 2341-2351 (1996)